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APTM20HM08FG
Full - Bridge MOSFET Power Module
VB US Q1 Q3
VDSS = 200V RDSon = 8m typ @ Tj = 25C ID = 208A @ Tc = 25C
Application * * * * Welding converters Switched Mode Power Supplies Uninterruptible Power Supplies Motor control
G1 OUT1 OUT2
G3
S1 Q2
S3 Q4
Features * Power MOS 7(R) FREDFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Fast intrinsic reverse diode - Avalanche energy rated - Very rugged Kelvin source for easy drive Very low stray inductance - Symmetrical design - M5 power connectors High level of integration
G2
G4
S2 0/VBUS
S4
* *
OUT1 G1 S1 VBUS 0/VBUS G2 S2
* Benefits * * * * *
S3 G3 OUT2
S4 G4
Outstanding performance at high frequency operation Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Low profile RoHS Compliant Max ratings 200 208 155 832 30 10 781 100 50 3000 Unit V A V m W A mJ
Absolute maximum ratings
Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS
Parameter Drain - Source Breakdown Voltage Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25C Tc = 80C
Tc = 25C
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com
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1-6
APTM20HM08FG- Rev 2
July, 2006
APTM20HM08FG
All ratings @ Tj = 25C unless otherwise specified Electrical Characteristics
Symbol IDSS RDS(on) VGS(th) IGSS Characteristic Test Conditions Min Zero Gate Voltage Drain Current Drain - Source on Resistance Gate Threshold Voltage Gate - Source Leakage Current
VGS = 0V,VDS = 200V VGS = 0V,VDS = 160V
Typ
Tj = 25C Tj = 125C 8 3
VGS = 10V, ID = 104A VGS = VDS, ID = 5mA VGS = 30 V, VDS = 0V
Max 375 1500 10 5 150
Unit A m V nA
Dynamic Characteristics
Symbol Ciss Coss Crss Qg Qgs Qgd Td(on) Tr Td(off) Tf Eon Eoff Eon Eoff
Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Gate - Source Charge Gate - Drain Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Switching Energy Turn-off Switching Energy
Test Conditions VGS = 0V VDS = 25V f = 1MHz VGS = 10V VBus = 100V ID = 208A Inductive switching @ 125C VGS = 15V VBus = 133V ID = 208A R G = 2.5 Inductive switching @ 25C VGS = 15V, VBus = 133V ID = 208A, R G = 2.5 Inductive switching @ 125C VGS = 15V, VBus = 133V ID = 208A, R G = 2.5
Min
Typ 14.4 4.66 0.29 280 106 134 32 64 88 116 1698 1858 1872 1972
Max
Unit nF
nC
ns
J
J
Source - Drain diode ratings and characteristics
Symbol IS VSD dv/dt trr Qrr Characteristic Continuous Source current (Body diode) Diode Forward Voltage Peak Diode Recovery Reverse Recovery Time Reverse Recovery Charge
Test Conditions
Min
Typ
Tc = 25C Tc = 80C VGS = 0V, IS = - 208A Tj = 25C Tj = 125C Tj = 25C Tj = 125C 1.8 6.8
IS = - 208A VR = 133V diS/dt = 200A/s
Max 208 155 1.3 5 230 450
Unit A V V/ns ns C
July, 2006 2-6 APTM20HM08FG- Rev 2
dv/dt numbers reflect the limitations of the circuit rather than the device itself. IS - 208A di/dt 700A/s VR VDSS Tj 150C
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APTM20HM08FG
Thermal and package characteristics
Symbol RthJC VISOL TJ TSTG TC Torque Wt Characteristic Junction to Case Thermal Resistance
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Min 2500 -40 -40 -40 3 2
Typ
Max 0.16 150 125 100 5 3.5 280
Unit C/W V C N.m g
Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight To heatsink For terminals M6 M5
SP6 Package outline (dimensions in mm)
See application note APT0601 - Mounting Instructions for SP6 Power Modules on www.microsemi.com
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APTM20HM08FG- Rev 2
July, 2006
APTM20HM08FG
Typical Performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.18 Thermal Impedance (C/W) 0.16 0.14 0.12 0.1 0.08 0.06 0.04 0.02 0.7 0.5 0.3 0.1 0.05 0.0001 0.001 0.01 0.1 1 10 Single Pulse 0.9
0 0.00001
rectangular Pulse Duration (Seconds) Low Voltage Output Characteristics 1400
VGS=15V 10V 9V 8.5V 8V 7.5V 7V 6.5V
Transfert Characteristics 600 ID, Drain Current (A) 500 400 300 200 100 0
TJ=25C T J=125C TJ=-55C V DS > ID(on)xRDS(on)MAX 250s pulse test @ < 0.5 duty cycle
1200 ID, Drain Current (A) 1000 800 600 400 200 0 0 4 8 12
16
20
24
28
0
VDS , Drain to Source Voltage (V) RDS(on) vs Drain Current 1.2 ID, DC Drain Current (A)
Normalized to V GS=10V @ 104A
1 2 3 4 5 6 7 8 9 10 VGS, Gate to Source Voltage (V)
RDS(on) Drain to Source ON Resistance
DC Drain Current vs Case Temperature 250 200 150 100 50 0
1.1 1
VGS=10V
VGS=20V
0.9 0.8 0 50 100 150 200 250 300 ID, Drain Current (A)
25
50
75
100
125
150
July, 2006 4-6 APTM20HM08FG- Rev 2
TC, Case Temperature (C)
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APTM20HM08FG
RDS(on), Drain to Source ON resistance (Normalized) Breakdown Voltage vs Temperature BVDSS, Drain to Source Breakdown Voltage (Normalized) 1.15 1.10 1.05 1.00 0.95 0.90 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (C) Threshold Voltage vs Temperature 1.2 VGS(TH), Threshold Voltage (Normalized) ID, Drain Current (A) 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 150 TC, Case Temperature (C) Capacitance vs Drain to Source Voltage 100000 C, Capacitance (pF)
Ciss
ON resistance vs Temperature 2.5 2.0 1.5 1.0 0.5 0.0 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (C) Maximum Safe Operating Area
VGS=10V ID= 104A
1000
limited by RDSon
100s
100
1ms
10
Single pulse TJ=150C TC=25C 1
10ms 100ms
1 10 100 1000 VDS, Drain to Source Voltage (V)
VGS, Gate to Source Voltage (V)
Gate Charge vs Gate to Source Voltage 14 I D=208A V DS=40V 12 TJ =25C 10 8 6 4 2 0 0 40 80 120 160 200 240 280 320 Gate Charge (nC)
July, 2006
VDS=100V
10000
Coss
VDS=160V
1000
Crss
100 0 10 20 30 40 50 VDS, Drain to Source Voltage (V)
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APTM20HM08FG- Rev 2
APTM20HM08FG
Delay Times vs Current 120 100 t d(on) and td(off) (ns) 80 60 40 20 0 0 50 100 150 200 250 300 350 I D, Drain Current (A)
VDS=133V RG=2.5 T J=125C L=100H
Rise and Fall times vs Current 160 140
V DS=133V R G=2.5 T J=125C L=100H
t d(off) tr and tf (ns)
120 100 80 60 40 20 0 0
tf
t d(on)
tr
50
100 150 200 250 300 350 ID, Drain Current (A)
Switching Energy vs Current 4 Switching Energy (mJ) 3 2 1 0 0 50 Eoff 1 100 150 200 250 300 350 I D, Drain Current (A) Operating Frequency vs Drain Current IDR, Reverse Drain Current (A) 350 300 Frequency (kHz) 250 200 150 100 50 0 25 50 75 100 125 150 175 200 I D, Drain Current (A)
V DS=133V D=50% R G=2.5 T J=125C T C=75C ZVS ZCS VDS=133V RG=2.5 TJ=125C L=100H
Switching Energy vs Gate Resistance 6
VDS=133V ID=208A TJ=125C L=100H
Eoff Eon
5 4 3 2
Eon and Eoff (mJ)
Eoff
Eon
0
5
10
15
20
25
Gate Resistance (Ohms) Source to Drain Diode Forward Voltage 1000 TJ =150C 100 TJ =25C 10
Hard switching
1 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 VSD, Source to Drain Voltage (V)
July, 2006
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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APTM20HM08FG- Rev 2
Microsemi reserves the right to change, without notice, the specifications and information contained herein

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